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2024
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07
Industry New Knowledge... "Ceramics International" uses stereolithography 3D printing technology to print high-purity complex silicon carbide structures.
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Industry new knowledge
Recently, a team led by Yan Lou, School of Mechanical and Electrical Engineering, Shenzhen University, published a research entitled 3D printing of high-purity complex SiC structures based on stereolithography in Ceramics International. A new method for preparing high-purity SiC structures based on stereolithography 3D printing process is proposed, in which SiO 2 powder is used as an additive to increase the solidified thickness from 27.8 μm to 53.0 μm.
Original link: https://www.sciencedirect.com/science/article/abs/pii/S0272884224014792
Adventure Technology official website: http://www.adventuretech.cn/
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research content
Traditional manufacturing methods are difficult to achieve complex silicon carbide (SiC) structures, while stereolithography (SLA)3D printing technology can effectively form complex structures with high precision. However, due to the increased light absorption of SiC powder, it is a great challenge to prepare 3D printed SiC slurry with excellent curing ability.
In order to solve the problem of insufficient photopolymerization performance of SiC slurry, this work uses silica as an additive to study the two types of hydrophilic and lipophilic silica powder, and studies the effect of silica particle size on the performance of the slurry system. The prepared SiC/SiO 2 /PEA slurry system successfully prepared high-purity silicon carbide with complex structure without pre-oxidation or precursor impregnation process, which provides a valuable reference for the additive manufacturing of high-purity complex SiC structures.
△ Fig. 1, schematic diagram of silicon carbide ceramic structure prepared by photopolymerization 3D printing (RBSC: reaction of silicon and carbon; H0: height of original slurry; H: height of upper liquid; SiCnw: silicon carbide nanowire).
2,(a) SEM morphology of silicon carbide nanoparticles and their elemental mapping EDS, (B) XRD analysis and (c) size distribution of silicon carbide particles.
Figure 3, (a)XRD diffraction pattern, SEM morphology of hydrophilic and lipophilic silica particles, and (B) elemental mapping EDS pattern of hydrophilic silica and (c) lipophilic silica.
Figure 4,(a) Optical properties of virgin silicon carbide, H30-SiC and L30-SiC slurries; (B) Rheological properties of virgin silicon carbide, H30-SiC and L30-SiC slurries.
△ Fig. 5, working mechanism of mud system under shear force;(a) L30-SiC mud system, (B) L30-SiC mud system.
△ Figure 6, Morphology of lipophilic silica with different particle sizes (D50=20 nm, D50 = 1 μm and D50 = 10 μm are (a), (B) and (c), respectively).
△ Fig. 7,(a) Optical properties of original silicon carbide, 20 nm, 1 μm, 10 μm and mixed mud; (B) Settlement height ratio of original silicon carbide, 20 nm, 1 μm, 10 μm and mixed mud;(c) Rheological properties of silicon carbide, 20 nm, 1 μm, 10 μm and mixed mud.
△ Figure 8,(a) Optical properties of 0PEA, 30PEA and 50PEA slurries; (B) Rheological properties of silicon carbide, 20 nm, 1 μm, 10 μm and mixed slurries;(c) Settlement height ratio of silicon carbide, 20 nm, 1 μm, 10 μm and mixed slurries.
9, Optical properties of silicon carbide slurries as a function of several important factors.
10 shows a schematic diagram of a printing structure and a sintering process thereof. (A) Dried at 25 ◦ C, (B) Pyrolyzed at 1000 ◦ C,(c) Appearance of the sample after sintering at 1600 ◦ C.
11, XRD diffraction analysis of 0PEA, 30PEA and 50PEA printed objects after sintering at 1600 0C for 4h. FIG.
12,(morphology and EDS plots of (a) OPEA sample sintered at 1000 ◦ C; (B), (B), (B), (30 ◦ c) and (d) PEA sample printed objects after 4h sintering at 1600 ◦ C).
research conclusion
In this study, high purity complex silicon carbide (SiC) structures were successfully fabricated by photopolymerization 3D printing. Hydrophobic SiO2 was used to reduce viscosity, graded particle size SiO2 powder to improve curing thickness and stability, and UV insensitive carbon source resin was introduced. After sintering, there is almost no SiO2 or SiOC residue in the high purity SiC structure samples, and the oxygen content is only 0.12%. This provides a new approach to the additive manufacturing of high purity complex SiC structures.
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